224 citations · 2.3k across the 66 of their papers we have counts for
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Sequential directional deposition of one-sided (In,Ga)N shells on GaN nanowires by molecular beam epitaxy
David van Treeck, Jonas Lähnemann, Guanhui Gao +3
Capitalizing on the directed nature of the atomic fluxes in molecular beam epitaxy, we propose and demonstrate the sequential directional deposition of lateral (In,Ga)N shells on G…
Optical properties of ScN layers grown on AlO(0001) by plasma-assisted molecular beam epitaxy
Duc V. Dinh, Frank Peiris, Jonas Lähnemann +1
An accurate knowledge of the optical constants (refractive index and extinction coefficient ) of ScN is crucial for understanding the optical properties of this binary nitri…
Growth mechanisms in molecular beam epitaxy for GaN-(In,Ga)N core-shell nanowires emitting in the green spectral range
David van Treeck, Jonas Lähnemann, Oliver Brandt +1
Using molecular beam epitaxy, we demonstrate the growth of (In,Ga)N shells emitting in the green spectral range around very thin (35 nm diameter) GaN core nanowires. These GaN nano…
Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires
Philipp John, Mikel Gómez Ruiz, Len van Deurzen +5
We study the molecular beam epitaxy of AlN nanowires between 950 and 1215 °C, well above the usual growth temperatures, to identify optimal growth conditions. The nanowires are gro…
Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy
Len van Deurzen, Jashan Singhal, Jimy Encomendero +8
Using low-temperature cathodoluminescence spectroscopy, we study the properties of N- and Al-polar AlN layers grown by molecular beam epitaxy on bulk AlN{0001}. Compared to the bul…