Monitoring the formation of nanowires by line-of-sight quadrupole mass spectrometry: a comprehensive description of the temporal evolution of GaN nanowire ensembles

Abstract

We use line-of-sight quadrupole mass spectrometry to monitor the spontaneous formation of GaN nanowires on Si during molecular beam epitaxy. We find that the temporal evolution of nanowire ensembles is well described by a double logistic function. The analysis of the temporal evolution of nanowire ensembles prepared under a wide variety of growth conditions allows us to construct a growth diagram which can be used to predict the average delay time that precedes nanowire formation.

References in corpus (8)

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• Critical role of two-dimensional island-mediated growth on the formation of semiconductor heterointerfaces
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Cited by in corpus (9)

• Observation of dielectrically confined excitons in ultrathin GaN nanowires up to room temperature
• Bias-controlled spectral response in GaN/AlN single-nanowire ultraviolet photodetectors
• High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the materials quality of bulk GaN
• Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation
• Elastic vs. plastic strain relaxation in coalesced GaN nanowires: an x-ray diffraction study
• External control of GaN band bending using phosphonate self-assembled monolayers
• Analysis of incubation time preceding the Ga-assisted nucleation and growth of GaAs nanowires on Si(111)
• Sequential directional deposition of one-sided (In,Ga)N shells on GaN nanowires by molecular beam epitaxy
• Density control of GaN nanowires at the wafer scale using self-assembled SiN${}_x$ patches on sputtered TiN(111)