Monitoring the formation of nanowires by line-of-sight quadrupole mass spectrometry: a comprehensive description of the temporal evolution of GaN nanowire ensembles

Abstract

We use line-of-sight quadrupole mass spectrometry to monitor the spontaneous formation of GaN nanowires on Si during molecular beam epitaxy. We find that the temporal evolution of nanowire ensembles is well described by a double logistic function. The analysis of the temporal evolution of nanowire ensembles prepared under a wide variety of growth conditions allows us to construct a growth diagram which can be used to predict the average delay time that precedes nanowire formation.

References in corpus (8)

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• Critical role of two-dimensional island-mediated growth on the formation of semiconductor heterointerfaces
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Cited by in corpus (15)

• Observation of dielectrically confined excitons in ultrathin GaN nanowires up to room temperature
• In situ analysis of catalyst composition during gold catalyzed GaAs nanowire growth
• UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices
• Bias-controlled spectral response in GaN/AlN single-nanowire ultraviolet photodetectors
• High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the materials quality of bulk GaN
• Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation
• Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process
• Elastic vs. plastic strain relaxation in coalesced GaN nanowires: an x-ray diffraction study
• Investigating laser induced phase engineering in MoS2 transistors
• External control of GaN band bending using phosphonate self-assembled monolayers
• Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy
• Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films
• Analysis of incubation time preceding the Ga-assisted nucleation and growth of GaAs nanowires on Si(111)
• Density control of GaN nanowires at the wafer scale using self-assembled SiN${}_x$ patches on sputtered TiN(111)
• Sequential directional deposition of one-sided (In,Ga)N shells on GaN nanowires by molecular beam epitaxy