127 citations · 1.1k across the 22 of their papers we have counts for
22 papers
Monitoring the formation of nanowires by line-of-sight quadrupole mass spectrometry: a comprehensive description of the temporal evolution of GaN nanowire ensembles
Sergio Fernández-Garrido, Johannes K. Zettler, Lutz Geelhaar +1
We use line-of-sight quadrupole mass spectrometry to monitor the spontaneous formation of GaN nanowires on Si during molecular beam epitaxy. We find that the temporal evolution of…
Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy
Sergio Fernández-Garrido, Vladimir M. Kaganer, Karl K. Sabelfeld +5
We investigate the axial and radial growth of GaN nanowires upon a variation of the Ga flux during molecular beam epitaxial growth. An increase in the Ga flux promotes radial growt…
Spontaneous nucleation and growth of GaN nanowires: Fundamental role of crystal polarity
Sergio Fernández-Garrido, Xiang Kong, Tobias Gotschke +4
We experimentally investigate whether crystal polarity affects the growth of GaN nanowires in plasma-assisted molecular beam epitaxy and whether their formation has to be induced b…
High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the materials quality of bulk GaN
J. K. Zettler, C. Hauswald, P. Corfdir +5
In molecular beam epitaxy, the spontaneous formation of GaN nanowires on Si(111) substrates at elevated temperatures is limited by the long incubation time that precedes nanowire n…
In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001)GaN
G. Koblmüller, S. Fernández-Garrido, E. Calleja +1
Real-time analysis of the growth modes during homoepitaxial (0001)GaN growth by plasma-assisted molecular beam epitaxy was performed using reflection high energy electron diffracti…
A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy
S. Fernández-Garrido, Ž. Gačević, E. Calleja
Indium incorporation and surface morphology of InAlN layers grown on (0001)GaN by plasma-assisted molecular beam epitaxy were investigated as a function of the impinging In flux an…
In situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction
S. Fernández-Garrido, G. Koblmüller, E. Calleja +1
Thermal decomposition of wurtzite (0001)-oriented GaN was analyzed: in vacuum, under active N exposure, and during growth by rf-plasma assisted molecular beam epitaxy. The GaN deco…
Electrical characterization of all-epitaxial Fe/GaN(0001) Schottky tunnel contacts
Sergio Fernàndez-Garrido, Kai U. Ubben, Jens Herfort +2
We analyze the properties of Fe Schottky contacts prepared in situ on n-type GaN(0001) by molecular beam epitaxy. In particular, we investigate the suitability of these epitaxial F…
Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene
Sergio Fernández-Garrido, Manfred Ramsteiner, Guanhui Gao +10
We demonstrate an all-epitaxial and scalable growth approach to fabricate single-crystalline GaN nanowires on graphene by plasma-assisted molecular beam epitaxy. As substrate, we e…
Observation of dielectrically confined excitons in ultrathin GaN nanowires up to room temperature
Johannes K. Zettler, Pierre Corfdir, Christian Hauswald +10
The realization of semiconductor structures with stable excitons at room temperature is crucial for the development of excitonics and polaritonics. Quantum confinement has commonly…
Polarity-induced selective area epitaxy of GaN nanowires
Ziani de Souza Schiaber, Gabriele Calabrese, Xiang Kong +6
We present a conceptually novel approach to achieve selective area epitaxy of GaN nanowires. The approach is based on the fact that these nanostructures do not form in plasma-assis…
A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)
S. Fernández-Garrido, J. Grandal, E. Calleja +2
The morphology of GaN samples grown by plasma-assisted molecular beam epitaxy on Si(111) was systematically studied as a function of impinging Ga/N flux ratio and growth temperatur…
Growth modes and coupled morphological-compositional modulations in GaP1-xNx layers grown on nominally (001)-oriented Si substrates
K. Ben Saddik, S. Fernandez-Garrido, R. Volkov +3
We investigated the chemical beam epitaxy of GaP1-xNx to correlate the growth parameters with their properties when they are grown on nominally (001)-oriented Si substrates, as des…
X-ray scattering study of GaN nanowires grown on Ti/AlO by molecular beam epitaxy
Vladimir M. Kaganer, Oleg V. Konovalov, Gabriele Calabrese +5
GaN nanowires (NWs) grown by molecular beam epitaxy on Ti films sputtered on AlO are studied by X-ray diffraction (XRD) and grazing incidence small-angle X-ray scatteri…
External control of GaN band bending using phosphonate self-assembled monolayers
T. Auzelle, F. Ullrich, S. Hietzschold +7
We report on the optoelectronic properties of GaN and surfaces after their functionalization with phosphonic acid derivatives. To analyze the possible correl…
Coalescence, crystallographic orientation and luminescence of ZnO nanowires grown on Si(001) by chemical vapour transport
S. Fernández-Garrido, C. Pisador, J. Lähnemann +3
We analyse the morphological, structural and luminescence properties of self-assembled ZnO nanowires grown by chemical vapour transport on Si(001). The examination of nanowire ense…
Radius-Dependent Homogeneous Strain in Uncoalesced GaN Nanowires
G. Calabrese, D. van Treeck, V. M. Kaganer +6
We investigate the strain state of ensembles of thin and nearly coalescence-free self-assembled GaN nanowires prepared by plasma-assisted molecular beam epitaxy on Ti/AlO$_{3…
Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy
C. Sinito, P. Corfdir, C. Pfüller +14
Several of the key issues of planar (Al,Ga)N-based deep-ultraviolet light emitting diodes could potentially be overcome by utilizing nanowire heterostructures, exhibiting high stru…
Self-Assembled formation of long, thin, and uncoalesced GaN nanowires on crystalline TiN films
David van Treeck, Gabriele Calabrese, Jelle J. W. Goertz +4
We investigate in detail the self-assembled nucleation and growth of GaN nanowires by molecular beam epitaxy on crystalline TiN films. We demonstrate that this type of substrate al…
Correlation between the structural and optical properties of spontaneously formed GaN nanowires: a quantitative evaluation of the impact of nanowire coalescence
S. Fernández-Garrido, V. M. Kaganer, C. Hauswald +5
We investigate the structural and optical properties of spontaneously formed GaN nanowires with different degrees of coalescence. This quantity is determined by an analysis of the…
Stacking faults as quantum wells in nanowires: Density of states, oscillator strength and radiative efficiency
P. Corfdir, C. Hauswald, J. K. Zettler +6
We investigate the nature of excitons bound to I1 basal-plane stacking faults [(I1;X)] in GaN nanowire ensembles by continuous-wave and time-resolved photoluminescence spectroscopy…
Sub-meV linewidth in GaN nanowire ensembles: absence of surface excitons due to the field-ionization of donors
Pierre Corfdir, Johannes K. Zettler, Christian Hauswald +3
We observe unusually narrow donor-bound exciton transitions (0.4 meV) in the photoluminescence spectra of GaN nanowire ensembles grown on Si(111) substrates at very high (> 850 deg…