A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)

Abstract

The morphology of GaN samples grown by plasma-assisted molecular beam epitaxy on Si(111) was systematically studied as a function of impinging Ga/N flux ratio and growth temperature (750-850°C).Two different growth regimes were identified: compact and nanocolumnar. A growth diagram was established as a function of growth parameters, exhibiting the transition between growth regimes, and showing under which growth conditions GaN cannot be grown due to thermal decomposition and Ga desorption. Present results indicate that adatoms diffusion length and the actual Ga/N ratio on the growing surface are key factors to achieve nanocolumnar growth.

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in (citation of published article) and may be found at J. Appl. Phys. 106, 126102 (2009) and may be found at https://doi.org/10.1063/1.3267151

References in corpus (1)

• In situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction

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