127 citations · 1k across the 20 of their papers we have counts for
20 papers
Optomechanical cavities based on epitaxial GaP on nominally (001)-oriented Si
Paula Mouriño, Laura Mercadé, Miguel Sinusía Lozano +8
Gallium phosphide (GaP) has recently received considerable attention as a suitable material for building photonic integrated circuits due to its remarkable optical and piezoelectri…
Monitoring the formation of nanowires by line-of-sight quadrupole mass spectrometry: a comprehensive description of the temporal evolution of GaN nanowire ensembles
Sergio Fernández-Garrido, Johannes K. Zettler, Lutz Geelhaar +1
We use line-of-sight quadrupole mass spectrometry to monitor the spontaneous formation of GaN nanowires on Si during molecular beam epitaxy. We find that the temporal evolution of…
Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy
Sergio Fernández-Garrido, Vladimir M. Kaganer, Karl K. Sabelfeld +5
We investigate the axial and radial growth of GaN nanowires upon a variation of the Ga flux during molecular beam epitaxial growth. An increase in the Ga flux promotes radial growt…
Spontaneous nucleation and growth of GaN nanowires: Fundamental role of crystal polarity
Sergio Fernández-Garrido, Xiang Kong, Tobias Gotschke +4
We experimentally investigate whether crystal polarity affects the growth of GaN nanowires in plasma-assisted molecular beam epitaxy and whether their formation has to be induced b…
High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the materials quality of bulk GaN
J. K. Zettler, C. Hauswald, P. Corfdir +5
In molecular beam epitaxy, the spontaneous formation of GaN nanowires on Si(111) substrates at elevated temperatures is limited by the long incubation time that precedes nanowire n…
Photoluminescence enhancement in quaternary III-nitrides alloys grown by molecular beam epitaxy with increasing Al content
S. Fernández-Garrido, J. Pereiro, F. González-Posada +4
Room temperature photoluminescence and optical absorption spectra have been measured in wurtzite InAlGaN (x 0.06, 0.02 < y < 0.27) layers grown by m…