18 citations · 38 across the 4 of their papers we have counts for
4 papers
Photoluminescence enhancement in quaternary III-nitrides alloys grown by molecular beam epitaxy with increasing Al content
S. Fernández-Garrido, J. Pereiro, F. González-Posada +4
Room temperature photoluminescence and optical absorption spectra have been measured in wurtzite InAlGaN (x 0.06, 0.02 < y < 0.27) layers grown by m…
Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy
S. Fernández-Garrido, A. Redondo-Cubero, R. Gago +7
Indium incorporation into wurtzite (0001)-oriented InAlGaN layers grown by plasma-assisted molecular beam epitaxy was studied as a function of the growth temp…
Enhanced radiative efficiency in GaN nanowires grown on sputtered TiN: effects of surface electric fields
T. Auzelle, M. Azadmand, T. Flissikowski +8
GaN nanowires grown by molecular beam epitaxy generally suffer from dominant nonradiative recombination, which is believed to originate from point defects. To suppress the formatio…
Crystal-phase quantum dots in GaN quantum wires
P. Corfdir, C. Hauswald, O. Marquardt +6
We study the nature of excitons bound to I1 basal plane stacking faults in ensembles of ultrathin GaN nanowires by continuous-wave and time-resolved photoluminescence spectroscopy.…