most citedA growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)

127 citations · 492 across the 8 of their papers we have counts for

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8 papers

cond-mat.mtrl-sci20246 cited

Formation mechanisms of single-crystalline InN quantum dots fabricated via droplet epitaxy

P. Aseev, Ž. Gačević, J. M. Mánuel +4

This work presents an experimental and theoretical insight into formation mechanisms of single crystalline wurtzite InN quantum dots (QDs) fabricated via metal droplet epitaxy (DE)…

physics.app-ph20249 cited

Unravelling the polarity of InN quantum dots using a modified approach of negative-spherical-aberration imaging

Piu Rajak, Mahabul Islam, J. J. Jiménez +7

InN quantum dots (QDs) are considered to be promising nanostructures for different device applications. For any hexagonal AB stacking semiconductor system, polarity is an important…

cond-mat.mtrl-sci2024113 cited

Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy

Sergio Fernández-Garrido, Vladimir M. Kaganer, Karl K. Sabelfeld +5

We investigate the axial and radial growth of GaN nanowires upon a variation of the Ga flux during molecular beam epitaxial growth. An increase in the Ga flux promotes radial growt…

cond-mat.mtrl-sci202414 cited

Photoluminescence enhancement in quaternary III-nitrides alloys grown by molecular beam epitaxy with increasing Al content

S. Fernández-Garrido, J. Pereiro, F. González-Posada +4

Room temperature photoluminescence and optical absorption spectra have been measured in wurtzite InAlGaN (x 0.06, 0.02 < y < 0.27) layers grown by m…

cond-mat.mtrl-sci202418 cited

Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy

S. Fernández-Garrido, A. Redondo-Cubero, R. Gago +7

Indium incorporation into wurtzite (0001)-oriented InAlGaN layers grown by plasma-assisted molecular beam epitaxy was studied as a function of the growth temp…

physics.app-ph202499 cited

In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001)GaN

G. Koblmüller, S. Fernández-Garrido, E. Calleja +1

Real-time analysis of the growth modes during homoepitaxial (0001)GaN growth by plasma-assisted molecular beam epitaxy was performed using reflection high energy electron diffracti…