92 citations · 247 across the 9 of their papers we have counts for
9 papers
A growth diagram for chemical beam epitaxy of GaPN alloys on nominally -oriented GaP-on-Si substrates
Karim Ben Saddik, Basilio Javier García, Sergio Fernández-Garrido
The dilute-nitride ternary compound GaPN is highly attractive to monolithically integrate pseudomorphic red light-emitting devices and photovoltaic cells with the sta…
H-diluted precursors for GaAs doping in chemical beam epitaxy
K. Ben Saddik, A. F. Braña, N. López +2
A wide range of n- and p-type doping levels in GaAs layers grown by chemical beam epitaxy is achieved using H-diluted DTBSi and CBr as gas precursors for Si and C. We s…
Small-angle X-ray scattering from GaN nanowires on Si(111): facet truncation rods, facet roughness, and Porod's law
Vladimir M. Kaganer, Oleg V. Konovalov, Sergio Fernández-Garrido
Small-angle X-ray scattering from GaN nanowires grown on Si(111) is studied experimentally and modeled by means of Monte Carlo simulations. It is shown that the scattering intensit…
Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation
Sergio Fernández-Garrido, Thomas Auzelle, Jonas Lähnemann +3
We demonstrate the top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation of pre-patterned GaN(0001) layers grown by hydride vapor phase epitaxy on A…
Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si(111)
Carsten Pfüller, Pierre Corfdir, Christian Hauswald +9
We investigate the 3.45-eV luminescence band of spontaneously formed GaN nanowires on Si(111) by photoluminescence and cathodoluminescence spectroscopy. This band is found to be pa…
Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil
Gabriele Calabrese, Pierre Corfdir, Guanhui Gao +5
We demonstrate the self-assembled growth of vertically aligned GaN nanowire ensembles on a flexible Ti foil by plasma-assisted molecular beam epitaxy. The analysis of single nanowi…
Comparison of the luminous efficiency of Ga- and N-polar InGaN/InGaN quantum wells grown by plasma-assisted molecular beam epitaxy
Sergio Fernández-Garrido, Jonas Lähnemann, Christian Hauswald +5
We investigate the luminescence of Ga- and N-polar InGaN/InGaN quantum wells (QWs) grown by plasma-assisted molecular beam epitaxy on freestanding GaN a…
Investigating the origin of the nonradiative decay of bound excitons in GaN nanowires
Christian Hauswald, Pierre Corfdir, Johannes K. Zettler +9
We investigate the origin of the fast recombination dynamics of bound and free excitons in GaN nanowire ensembles by temperature-dependent photoluminescence spectroscopy using both…
Statistical analysis of the shape of one-dimensional nanostructures: determining the coalescence degree of spontaneously formed GaN nanowires
Oliver Brandt, Sergio Fernández-Garrido, Johannes K. Zettler +4
Single GaN nanowires formed spontaneously on a given substrate represent nanoscopic single crystals free of any extended defects. However, due to the high area density of thus form…