Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil

Abstract

We demonstrate the self-assembled growth of vertically aligned GaN nanowire ensembles on a flexible Ti foil by plasma-assisted molecular beam epitaxy. The analysis of single nanowires by transmission electron microscopy reveals that they are single crystalline. Low-temperature photoluminescence spectroscopy demonstrates that, in comparison to standard GaN nanowires grown on Si, the nanowires prepared on the Ti foil exhibit a equivalent crystalline perfection, a higher density of basal-plane stacking faults, but a reduced density of inversion domain boundaries. The room-temperature photoluminescence spectrum of the nanowire ensemble is not influenced or degraded by the bending of the substrate. The present results pave the way for the fabrication of flexible optoelectronic devices based on GaN nanowires on metal foils.

4 pages, 3 figures

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Cited by in corpus (6)

• Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene
• Self-Assembled formation of long, thin, and uncoalesced GaN nanowires on crystalline TiN films
• Polarity-induced selective area epitaxy of GaN nanowires
• Ga-polar (In,Ga)N/GaN quantum wells vs. N-polar (In,Ga)N quantum disks in GaN nanowires: Comparative analysis of carrier recombination, diffusion, and radiative efficiency
• X-ray scattering study of GaN nanowires grown on Ti/Al${}_2$O${}_3$ by molecular beam epitaxy
• Coalescence, crystallographic orientation and luminescence of ZnO nanowires grown on Si(001) by chemical vapour transport