activity
20162024
most citedLow-voltage 2D materials-based printed field-effect transistors for integrated digital and analog electronics on paper

183 citations · 419 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.mtrl-sci2024★ 87 cited

Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene

Sergio Fernández-Garrido, Manfred Ramsteiner, Guanhui Gao +10

We demonstrate an all-epitaxial and scalable growth approach to fabricate single-crystalline GaN nanowires on graphene by plasma-assisted molecular beam epitaxy. As substrate, we e…

physics.app-ph2024★ 18 cited

Polarity-induced selective area epitaxy of GaN nanowires

Ziani de Souza Schiaber, Gabriele Calabrese, Xiang Kong +6

We present a conceptually novel approach to achieve selective area epitaxy of GaN nanowires. The approach is based on the fact that these nanostructures do not form in plasma-assis…

cond-mat.mtrl-sci2022★ 2 cited

X-ray scattering study of GaN nanowires grown on Ti/AlO by molecular beam epitaxy

Vladimir M. Kaganer, Oleg V. Konovalov, Gabriele Calabrese +5

GaN nanowires (NWs) grown by molecular beam epitaxy on Ti films sputtered on AlO are studied by X-ray diffraction (XRD) and grazing incidence small-angle X-ray scatteri…

cond-mat.mtrl-sci2020

Radius-Dependent Homogeneous Strain in Uncoalesced GaN Nanowires

G. Calabrese, D. van Treeck, V. M. Kaganer +6

We investigate the strain state of ensembles of thin and nearly coalescence-free self-assembled GaN nanowires prepared by plasma-assisted molecular beam epitaxy on Ti/AlO$_{3…

physics.app-ph2019★ 183 cited

Low-voltage 2D materials-based printed field-effect transistors for integrated digital and analog electronics on paper

Silvia Conti, Lorenzo Pimpolari, Gabriele Calabrese +13

Paper is the ideal substrate for the development of flexible and environmentally sustainable ubiquitous electronic systems, which, combined with two-dimensional materials, could be…

cond-mat.mtrl-sci2018★ 37 cited

Self-Assembled formation of long, thin, and uncoalesced GaN nanowires on crystalline TiN films

David van Treeck, Gabriele Calabrese, Jelle J. W. Goertz +4

We investigate in detail the self-assembled nucleation and growth of GaN nanowires by molecular beam epitaxy on crystalline TiN films. We demonstrate that this type of substrate al…

cond-mat.mtrl-sci2016★ 92 cited

Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil

Gabriele Calabrese, Pierre Corfdir, Guanhui Gao +5

We demonstrate the self-assembled growth of vertically aligned GaN nanowire ensembles on a flexible Ti foil by plasma-assisted molecular beam epitaxy. The analysis of single nanowi…