127 citations · 1.1k across the 22 of their papers we have counts for
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In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001)GaN
G. Koblmüller, S. Fernández-Garrido, E. Calleja +1
Real-time analysis of the growth modes during homoepitaxial (0001)GaN growth by plasma-assisted molecular beam epitaxy was performed using reflection high energy electron diffracti…
A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy
S. Fernández-Garrido, Ž. Gačević, E. Calleja
Indium incorporation and surface morphology of InAlN layers grown on (0001)GaN by plasma-assisted molecular beam epitaxy were investigated as a function of the impinging In flux an…
Polarity-induced selective area epitaxy of GaN nanowires
Ziani de Souza Schiaber, Gabriele Calabrese, Xiang Kong +6
We present a conceptually novel approach to achieve selective area epitaxy of GaN nanowires. The approach is based on the fact that these nanostructures do not form in plasma-assis…
External control of GaN band bending using phosphonate self-assembled monolayers
T. Auzelle, F. Ullrich, S. Hietzschold +7
We report on the optoelectronic properties of GaN and surfaces after their functionalization with phosphonic acid derivatives. To analyze the possible correl…