22 citations · 108 across the 10 of their papers we have counts for
10 papers
Bismuth surfactant-enhanced III-As epitaxy on GaAs(111)A
Ahmed M. Hassanen, Jesus Herranz, Lutz Geelhaar +1
Quantum dot (QD) growth on high () symmetry GaAs{111} surfaces holds promise for efficient entangled photon sources. Unfortunately, homoepitaxy on GaAs{111} surfaces suffer…
Carrier Recombination in Highly Uniform and Phase-Pure GaAs/(Al,Ga)As Core/Shell Nanowire Arrays on Si(111): Mott Transition and Internal Quantum Efficiency
Miriam Oliva, Timur Flissikowski, Michał Góra +7
GaAs-based nanowires are among the most promising candidates for realizing a monolithical integration of III-V optoelectronics on the Si platform. To realize their full potential f…
Exploiting of flux shadowing effect on InGaAs asymmetric shell growth for strain and bending engineering in GaAs - InGaAs core - shell NW arrays
Mahmoud Al Humaidi, Julian Jakob, Ali Al Hassan +8
Here we report on non-uniform shell growth of In(x)Ga(1-x)As onto GaAs nanowire (NW) core by molecular beam epitaxy (MBE). The growth was realized on pre-patterned silicon substrat…
In-situ X-ray analysis of misfit strain and curvature of bent polytypic GaAs-In(x)Ga(1-x)As core-shell nanowires
Mahmoud Al-Humaidi, Ludwig Feigl, Julian Jakob +9
Misfit strain in core-shell nanowires can be elastically released by nanowire bending in case of asymmetric shell growth around the nanowire core. In this work, we investigate the…
Beam damage of single semiconductor nanowires during X-ray nano beam diffraction experiments
Ali AlHassan, Jonas Lähnemann, Arman Davtyan +8
Nanoprobe X-ray diffraction (nXRD) using focused synchrotron radiation is a powerful technique to study the structural properties of individual semiconductor nanowires. However, wh…
Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band
Jesús Herranz, Pierre Corfdir, Esperanza Luna +8
Core-shell GaAs-based nanowires monolithically integrated on Si constitute a promising class of nanostructures that could enable light emitters for fast inter- and intrachip optica…