31 citations · 207 across the 12 of their papers we have counts for
12 papers
Dislocation correlations in GaN epitaxial films revealed by EBSD and XRD
Vladimir M. Kaganer, Domenik Spallek, Philipp John +2
Correlations between dislocations in crystals reduce the elastic energy via screening of the strain by the surrounding dislocations. We study the correlations of threading dislocat…
Kinetics, thermodynamics, and catalysis of the cation incorporation into GeO2, SnO2, and (SnxGe1-x)O2 during suboxide molecular beam epitaxy
Wenshan Chen, Kingsley Egbo, Joe Kler +3
Rutile GeO is a promising ultra-wide bandgap semiconductor for future power electronic devices whose alloy with the wide bandgap semiconductor rutile-SnO enables bandgap en…
Spatially-resolved luminescence and crystal structure of single core-shell nanowires measured in the as-grown geometry
Ali AlHassan, Jonas Lähnemann, Steven Leake +9
We report on the direct correlation between the structural and optical properties of single, as-grown core-multi-shell GaAs/InGaAs/GaAs/AlAs/GaAs nanowires. Fabri…
Assessment of AlGaN/AlN superlattices on GaN nanowires as active region of electron-pumped ultraviolet sources
I. Dimkou, A. Harikumar, F. Donatini +9
In this paper, we describe the design and characterization of 400-nm-long (88 periods) AlxGa1-xN/AlN (0 < x < 0.1) quantum dot superlattices deposited on self-assembled GaN nanowir…
Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1)
Melanie Budde, Thilo Remmele, Carsten Tschammer +8
The growth of NiO on GaN(00.1) substrates by plasma-assisted molecular beam epitaxy under oxygen rich conditions was investigated at growth temperatures between 100 C and…
Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band
Jesús Herranz, Pierre Corfdir, Esperanza Luna +8
Core-shell GaAs-based nanowires monolithically integrated on Si constitute a promising class of nanostructures that could enable light emitters for fast inter- and intrachip optica…
Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation
Sergio Fernández-Garrido, Thomas Auzelle, Jonas Lähnemann +3
We demonstrate the top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation of pre-patterned GaN(0001) layers grown by hydride vapor phase epitaxy on A…
Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy
C. Sinito, P. Corfdir, C. Pfüller +14
Several of the key issues of planar (Al,Ga)N-based deep-ultraviolet light emitting diodes could potentially be overcome by utilizing nanowire heterostructures, exhibiting high stru…
Effect of Ge-doping on the short-wave, mid- and far-infrared intersubband transitions in GaN/AlGaN heterostructures
Caroline B. Lim, Akhil Ajay, Jonas Lähnemann +2
This paper assesses the effects of Ge-doping on the structural and optical (band-to-band and intersubband (ISB)) properties of GaN/AlGaN multi-quantum wells (QWs) designed to displ…
Luminescent defects in a few-layer h-BN film grown by molecular beam epitaxy
A. Hernández-Mínguez, J. Lähnemann, S. Nakhaie +2
We report on luminescent centers contained in a few-layer-thick hexagonal boron nitride (h-BN) film grown on Ni by molecular beam epitaxy. After transfer to a SiO/Si substrate,…
The electrical conductivity tensor of -Ga2O3 analyzed by van der Pauw measurements: Inherent anisotropy, off-diagonal element, and the impact of grain boundaries
Christian Golz, Vanesa Hortelano, Fariba Hatami +3
The semiconducting oxide -Gallium Oxide (-GaO) possesses a monoclinic unit cell whose low symmetry generally leads to anisotropic physical properties. For example…
Atomically thin spherical shell-shaped superscatterers based on Bohr model
Rujiang Li, Xiao Lin, Shisheng Lin +2
Graphene monolayers can be used for atomically thin three-dimensional shell-shaped superscatterer designs. Due to the excitation of the first-order resonance of transverse magnetic…