31 citations · 207 across the 12 of their papers we have counts for
7 papers · 1 filter
Assessment of AlGaN/AlN superlattices on GaN nanowires as active region of electron-pumped ultraviolet sources
I. Dimkou, A. Harikumar, F. Donatini +9
In this paper, we describe the design and characterization of 400-nm-long (88 periods) AlxGa1-xN/AlN (0 < x < 0.1) quantum dot superlattices deposited on self-assembled GaN nanowir…
Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1)
Melanie Budde, Thilo Remmele, Carsten Tschammer +8
The growth of NiO on GaN(00.1) substrates by plasma-assisted molecular beam epitaxy under oxygen rich conditions was investigated at growth temperatures between 100 C and…
Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band
Jesús Herranz, Pierre Corfdir, Esperanza Luna +8
Core-shell GaAs-based nanowires monolithically integrated on Si constitute a promising class of nanostructures that could enable light emitters for fast inter- and intrachip optica…
Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation
Sergio Fernández-Garrido, Thomas Auzelle, Jonas Lähnemann +3
We demonstrate the top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation of pre-patterned GaN(0001) layers grown by hydride vapor phase epitaxy on A…
Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy
C. Sinito, P. Corfdir, C. Pfüller +14
Several of the key issues of planar (Al,Ga)N-based deep-ultraviolet light emitting diodes could potentially be overcome by utilizing nanowire heterostructures, exhibiting high stru…
Effect of Ge-doping on the short-wave, mid- and far-infrared intersubband transitions in GaN/AlGaN heterostructures
Caroline B. Lim, Akhil Ajay, Jonas Lähnemann +2
This paper assesses the effects of Ge-doping on the structural and optical (band-to-band and intersubband (ISB)) properties of GaN/AlGaN multi-quantum wells (QWs) designed to displ…
Luminescent defects in a few-layer h-BN film grown by molecular beam epitaxy
A. Hernández-Mínguez, J. Lähnemann, S. Nakhaie +2
We report on luminescent centers contained in a few-layer-thick hexagonal boron nitride (h-BN) film grown on Ni by molecular beam epitaxy. After transfer to a SiO/Si substrate,…