Luminescent defects in a few-layer h-BN film grown by molecular beam epitaxy
arXiv:1902.08528 · doi:10.1103/PhysRevApplied.10.044031
Abstract
We report on luminescent centers contained in a few-layer-thick hexagonal boron nitride (h-BN) film grown on Ni by molecular beam epitaxy. After transfer to a SiO/Si substrate, sharp lines are observed in photo- and cathodoluminescence spectra in both the ultraviolet and the visible range. Spatially resolved measurements reveal that the luminescent centers responsible for these lines are localized within microscopic multi-layer islands that form at the nucleation centers of the h-BN film. The comparison of their energy, polarization and phonon replica emission with previous theoretical predictions suggest that the NV anti-site could be one of the light emitters present in our sample. Moreover, we have also observed evidences of other kinds of centers that could be associated to defects containing carbon or oxygen. The characterized luminescent defects could have potential applications as quantum light sources.
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Cited by in corpus (6)
- Identifying Carbon as the Source of Visible Single Photon Emission from Hexagonal Boron Nitride
- Scalable and Deterministic Fabrication of Quantum Emitter Arrays from Hexagonal Boron Nitride
- Band gap measurements of monolayer h-BN and insights into carbon-related point defects
- Probing the Optical Dynamics of Quantum Emitters in Hexagonal Boron Nitride
- Acoustically modulated optical emission of hexagonal boron nitride layers
- Design and implementation of a device based on an off-axis parabolic mirror to perform luminescence experiments in a scanning tunneling microscope