45 citations · 169 across the 11 of their papers we have counts for
13 papers
Bismuth surfactant-enhanced III-As epitaxy on GaAs(111)A
Ahmed M. Hassanen, Jesus Herranz, Lutz Geelhaar +1
Quantum dot (QD) growth on high () symmetry GaAs{111} surfaces holds promise for efficient entangled photon sources. Unfortunately, homoepitaxy on GaAs{111} surfaces suffer…
Drastic effect of sequential deposition resulting from flux directionality on the luminescence efficiency of nanowire shells
Hanno Küpers, Ryan B. Lewis, Pierre Corfdir +6
Core-shell nanowire heterostructures form the basis for many innovative devices. When compound nanowire shells are grown by directional deposition techniques, the azimuthal positio…
Bending of core-shell nanowires by asymmetric shell deposition
Spencer W. McDermott, Ryan B. Lewis
Freestanding semiconductor nanowires have opened up new possibilities for semiconductor devices, enabling geometries, material combinations and strain states which were not previou…
Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band
Jesús Herranz, Pierre Corfdir, Esperanza Luna +8
Core-shell GaAs-based nanowires monolithically integrated on Si constitute a promising class of nanostructures that could enable light emitters for fast inter- and intrachip optica…
Bismuth-surfactant-induced growth and structure of InAs/GaAs(110) quantum dots
Ryan B. Lewis, Achim Trampert, Esperanza Luna +3
We explore the Bi-surfactant-directed self-assembly and structure of InAs quantum dots grown on GaAs(110) by molecular beam epitaxy. The addition of a Bi flux during InAs depositio…
Axial GaAs/Ga(As,Bi) Nanowire Heterostructures
Miriam Oliva, Guanhui Gao, Esperanza Luna +2
Bi-containing III-V semiconductors constitute an exciting class of metastable compounds with wide-ranging potential optoelectronic and electronic applications. However, the growth…