45 citations · 169 across the 11 of their papers we have counts for
6 papers · 1 filter
Optimization of ohmic contacts to n-type GaAs nanowires
Ludwig Hüttenhofer, Dionysios Xydias, Ryan B. Lewis +6
III-V nanowires are comprehensively studied because of their suitability for optoelectronic quantum technology applications. However, their small dimensions and the spatial separat…
Diameter evolution of selective area grown Ga-assisted GaAs nanowires
Hanno Küpers, Ryan B. Lewis, Abbes Tahraoui +5
We present a novel two-step approach for the selective area growth (SAG) of GaAs nanowires (NWs) by molecular beam epitaxy which has enabled a detailed exploration of the NW diamet…
Surface preparation and patterning by nano imprint lithography for the selective area growth of GaAs nanowires on Si(111)
Hanno Küpers, Abbes Tahraoui, Ryan B. Lewis +6
The selective area growth of Ga-assisted GaAs nanowires (NWs) with a high vertical yield on Si(111) substrates is still challenging. Here, we explore different surface preparations…
Fine structure of excitons in InAs quantum dots on GaAs(110) planar layers and nanowire facets
Pierre Corfdir, Ryan B. Lewis, Lutz Geelhaar +1
We investigate the optical properties of InAs quantum dots grown by molecular beam epitaxy on GaAs(110) using Bi as a surfactant. The quantum dots are synthesized on planar GaAs(11…
Self-assembly of InAs nanostructures on the sidewalls of GaAs nanowires directed by a Bi surfactant
Ryan B. Lewis, Pierre Corfdir, Jesús Herranz +4
Surface energies play a dominant role in the self-assembly of three dimensional (3D) nanostructures. In this letter, we show that using surfactants to modify surface energies can p…
Quantum dot self-assembly driven by a surfactant-induced morphological instability
Ryan B. Lewis, Pierre Corfdir, Hong Li +4
In strained heteroepitaxy, two-dimensional (2D) layers can exhibit a critical thickness at which three-dimensional (3D) islands self-assemble, relieving misfit strain at the cost o…