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Drastic effect of sequential deposition resulting from flux directionality on the luminescence efficiency of nanowire shells
Hanno Küpers, Ryan B. Lewis, Pierre Corfdir +6
Core-shell nanowire heterostructures form the basis for many innovative devices. When compound nanowire shells are grown by directional deposition techniques, the azimuthal positio…
Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band
Jesús Herranz, Pierre Corfdir, Esperanza Luna +8
Core-shell GaAs-based nanowires monolithically integrated on Si constitute a promising class of nanostructures that could enable light emitters for fast inter- and intrachip optica…
Bismuth-surfactant-induced growth and structure of InAs/GaAs(110) quantum dots
Ryan B. Lewis, Achim Trampert, Esperanza Luna +3
We explore the Bi-surfactant-directed self-assembly and structure of InAs quantum dots grown on GaAs(110) by molecular beam epitaxy. The addition of a Bi flux during InAs depositio…
Axial GaAs/Ga(As,Bi) Nanowire Heterostructures
Miriam Oliva, Guanhui Gao, Esperanza Luna +2
Bi-containing III-V semiconductors constitute an exciting class of metastable compounds with wide-ranging potential optoelectronic and electronic applications. However, the growth…
Surface preparation and patterning by nano imprint lithography for the selective area growth of GaAs nanowires on Si(111)
Hanno Küpers, Abbes Tahraoui, Ryan B. Lewis +6
The selective area growth of Ga-assisted GaAs nanowires (NWs) with a high vertical yield on Si(111) substrates is still challenging. Here, we explore different surface preparations…