45 citations · 169 across the 11 of their papers we have counts for
5 papers · 1 filter
Optimization of ohmic contacts to n-type GaAs nanowires
Ludwig Hüttenhofer, Dionysios Xydias, Ryan B. Lewis +6
III-V nanowires are comprehensively studied because of their suitability for optoelectronic quantum technology applications. However, their small dimensions and the spatial separat…
Diameter evolution of selective area grown Ga-assisted GaAs nanowires
Hanno Küpers, Ryan B. Lewis, Abbes Tahraoui +5
We present a novel two-step approach for the selective area growth (SAG) of GaAs nanowires (NWs) by molecular beam epitaxy which has enabled a detailed exploration of the NW diamet…
Fine structure of excitons in InAs quantum dots on GaAs(110) planar layers and nanowire facets
Pierre Corfdir, Ryan B. Lewis, Lutz Geelhaar +1
We investigate the optical properties of InAs quantum dots grown by molecular beam epitaxy on GaAs(110) using Bi as a surfactant. The quantum dots are synthesized on planar GaAs(11…
Self-assembly of InAs nanostructures on the sidewalls of GaAs nanowires directed by a Bi surfactant
Ryan B. Lewis, Pierre Corfdir, Jesús Herranz +4
Surface energies play a dominant role in the self-assembly of three dimensional (3D) nanostructures. In this letter, we show that using surfactants to modify surface energies can p…
Exciton dynamics in GaAs/(Al,Ga)As core-shell nanowires with shell quantum dots
Pierre Corfdir, Hanno Küpers, Ryan B. Lewis +4
We study the dynamics of excitons in GaAs/(Al,Ga)As core-shell nanowires by continuous-wave and time-resolved photoluminescence and photoluminescence excitation spectroscopy. Stron…