55 citations · 139 across the 4 of their papers we have counts for
4 papers
A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires
M. Musolino, D. van Treeck, A. Tahraoui +6
We investigated the origin of the high reverse leakage current in light emitting diodes (LEDs) based on (In,Ga)N/GaN nanowire (NW) ensembles grown by molecular beam epitaxy on Si s…
Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process
Johannes K. Zettler, Pierre Corfdir, Lutz Geelhaar +3
We investigate the influence of modified growth conditions during the spontaneous formation of GaN nanowires on Si(111) in plasma-assisted molecular beam epitaxy. We find that a tw…
Correlation between In content and emission wavelength of InGaN/GaN nanowire heterostructures
Martin Wölz, Jonas Lähnemann, Oliver Brandt +7
GaN nanowire ensembles with axial InGaN multi-quantum wells (MQWs) were grown by molecular beam epitaxy. In a series of samples, we varied the In content in the MQWs from almost ze…
Current path in light emitting diodes based on nanowire ensembles
Friederich Limbach, Christian Hauswald, Jonas Lähnemann +8
Light emitting diodes (LEDs) were fabricated using ensembles of free-standing (In,Ga)N/GaN nanowires (NWs) grown on Si substrates in the self-induced growth mode by molecular beam…