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cond-mat.mtrl-sci2015★ 20 cited

Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process

Johannes K. Zettler, Pierre Corfdir, Lutz Geelhaar +3

We investigate the influence of modified growth conditions during the spontaneous formation of GaN nanowires on Si(111) in plasma-assisted molecular beam epitaxy. We find that a tw…