131 citations · 1.9k across the 71 of their papers we have counts for
5 papers · 1 filter
Carrier Recombination in Highly Uniform and Phase-Pure GaAs/(Al,Ga)As Core/Shell Nanowire Arrays on Si(111): Mott Transition and Internal Quantum Efficiency
Miriam Oliva, Timur Flissikowski, Michał Góra +7
GaAs-based nanowires are among the most promising candidates for realizing a monolithical integration of III-V optoelectronics on the Si platform. To realize their full potential f…
A route for the top-down fabrication of ordered ultrathin GaN nanowires
Miriam Oliva, Vladimir Kaganer, Maximilian Pudelski +5
Ultrathin GaN nanowires (NWs) are attractive to maximize surface effects and as building block in high-frequency transistors. Here, we introduce a facile route for the top-down fab…
Lattice parameters of ScAlN layers grown on GaN(0001) by plasma-assisted molecular beam epitaxy
Duc V. Dinh, Jonas Lähnemann, Lutz Geelhaar +1
An accurate knowledge of the lattice parameters of the new nitride ScAlN is essential for understanding the elastic and piezoelectric properties of this…
Density control of GaN nanowires at the wafer scale using self-assembled SiN patches on sputtered TiN(111)
Thomas Auzelle, Miriam Oliva, Philipp John +3
The self-assembly of heteroepitaxial GaN nanowires using either molecular beam epitaxy (MBE) or metal-organic vapor phase epitaxy (MOVPE) mostly results in wafer-scale ensembles wi…
Exploiting of flux shadowing effect on InGaAs asymmetric shell growth for strain and bending engineering in GaAs - InGaAs core - shell NW arrays
Mahmoud Al Humaidi, Julian Jakob, Ali Al Hassan +8
Here we report on non-uniform shell growth of In(x)Ga(1-x)As onto GaAs nanowire (NW) core by molecular beam epitaxy (MBE). The growth was realized on pre-patterned silicon substrat…