114 citations · 806 across the 33 of their papers we have counts for
10 papers · 1 filter
Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films
Mani Azadmand, Tomas Auzelle, Jonas Lähnemann +7
We demonstrate the self-assembled formation of AlN nanowires by molecular beam epitaxy on sputtered TiN films on sapphire. This choice of substrate allows growth at an exceptionall…
Toward Quantitative Measurements of Piezoelectricity in III-N Semiconductors Nanowires
L. Jaloustre, S. Le-Denmat, T. Auzelle +4
Piezoelectric semiconductor III-Nitride nanostructures have received increasing interest as an alternative material for energy harvesters, sensors, and self-sustainable electronics…
Electroluminescence and current-voltage measurements of single (In,Ga)N/GaN nanowire light-emitting diodes in the nanowire ensemble
David van Treeck, Johannes Ledig, Gregor Scholz +7
We present the combined analysis of the electroluminescence (EL) as well as the current-voltage (I-V) behavior of single, freestanding (In,Ga)N/GaN nanowire (NW) light-emitting dio…
Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band
Jesús Herranz, Pierre Corfdir, Esperanza Luna +8
Core-shell GaAs-based nanowires monolithically integrated on Si constitute a promising class of nanostructures that could enable light emitters for fast inter- and intrachip optica…
Analysis of incubation time preceding the Ga-assisted nucleation and growth of GaAs nanowires on Si(111)
Faebian Bastiman, Hanno Küpers, Claudio Somaschini +2
The incubation time preceding nucleation and growth of surface nanostructures is interesting from a fundamental viewpoint but also of practical relevance as it determines statistic…
Influence of the source arrangement on shell growth around GaN nanowires in molecular beam epitaxy
David van Treeck, Sergio Fernández-Garrido, Lutz Geelhaar
In a combined experimental and theoretical study, we investigate the influence of the material source arrangement in a molecular beam epitaxy (MBE) system on the growth of nanowire…