131 citations · 1.9k across the 71 of their papers we have counts for
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Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si(111)
Carsten Pfüller, Pierre Corfdir, Christian Hauswald +9
We investigate the 3.45-eV luminescence band of spontaneously formed GaN nanowires on Si(111) by photoluminescence and cathodoluminescence spectroscopy. This band is found to be pa…
Quenching of the luminescence intensity of GaN nanowires under electron beam exposure: Impact of C adsorption on the exciton lifetime
Jonas Lähnemann, Timur Flissikowski, Martin Wölz +4
Electron irradiation of GaN nanowires in a scanning electron microscope strongly reduces their luminous efficiency as shown by cathodoluminescence imaging and spectroscopy. We demo…
Exciton dynamics in GaAs/(Al,Ga)As core-shell nanowires with shell quantum dots
Pierre Corfdir, Hanno Küpers, Ryan B. Lewis +4
We study the dynamics of excitons in GaAs/(Al,Ga)As core-shell nanowires by continuous-wave and time-resolved photoluminescence and photoluminescence excitation spectroscopy. Stron…
Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil
Gabriele Calabrese, Pierre Corfdir, Guanhui Gao +5
We demonstrate the self-assembled growth of vertically aligned GaN nanowire ensembles on a flexible Ti foil by plasma-assisted molecular beam epitaxy. The analysis of single nanowi…
Crystal-phase quantum dots in GaN quantum wires
P. Corfdir, C. Hauswald, O. Marquardt +6
We study the nature of excitons bound to I1 basal plane stacking faults in ensembles of ultrathin GaN nanowires by continuous-wave and time-resolved photoluminescence spectroscopy.…
Radial Stark effect in (In,Ga)N nanowires
Jonas Lähnemann, Pierre Corfdir, Felix Feix +5
We study the luminescence of unintentionally doped and Si-doped InGaN nanowires with a low In content (x<0.2) grown by molecular beam epitaxy on Si substrates. The emis…