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Composition and optical properties of (In,Ga)As nanowires grown by group-III-assisted molecular beam epitaxy
M Gómez Ruiz, Aron Castro, Jesús Herranz +5
(In,Ga) alloy droplets are used to catalyse the growth of (In,Ga)As nanowires by molecular beam epitaxy on Si(111) substrates. The composition, morphology and optical properties of…
Sequential directional deposition of one-sided (In,Ga)N shells on GaN nanowires by molecular beam epitaxy
David van Treeck, Jonas Lähnemann, Guanhui Gao +3
Capitalizing on the directed nature of the atomic fluxes in molecular beam epitaxy, we propose and demonstrate the sequential directional deposition of lateral (In,Ga)N shells on G…
Growth mechanisms in molecular beam epitaxy for GaN-(In,Ga)N core-shell nanowires emitting in the green spectral range
David van Treeck, Jonas Lähnemann, Oliver Brandt +1
Using molecular beam epitaxy, we demonstrate the growth of (In,Ga)N shells emitting in the green spectral range around very thin (35 nm diameter) GaN core nanowires. These GaN nano…
Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires
Philipp John, Mikel Gómez Ruiz, Len van Deurzen +5
We study the molecular beam epitaxy of AlN nanowires between 950 and 1215 °C, well above the usual growth temperatures, to identify optimal growth conditions. The nanowires are gro…
Bismuth surfactant-enhanced III-As epitaxy on GaAs(111)A
Ahmed M. Hassanen, Jesus Herranz, Lutz Geelhaar +1
Quantum dot (QD) growth on high () symmetry GaAs{111} surfaces holds promise for efficient entangled photon sources. Unfortunately, homoepitaxy on GaAs{111} surfaces suffer…