Position controlled self-catalyzed growth of GaAs nanowires by molecular beam epitaxy

Abstract

GaAs nanowires are grown by molecular beam epitaxy using a self-catalyzed, Ga-assisted growth technique. Position control is achieved by nano-patterning a SiO2 layer with arrays of holes with a hole diameter of 85 nm and a hole pitch varying between 200 nm and 2 \mum. Gallium droplets form preferentially at the etched holes acting as catalyst for the nanowire growth. The nanowires have hexagonal cross-sections with {110} side facets and crystallize predominantly in zincblende. The interdistance dependence of the nanowire growth rate indicates a change of the III/V ratio towards As-rich conditions for large hole distances inhibiting NW growth.

arXiv comment9 pages, 4 figures

References in corpus (2)

• Why does wurtzite form in nanowires of III-V zinc-blende semiconductors?
• Structural and optical properties of high quality zinc-blende/wurtzite GaAs hetero-nanowires

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• MBE growth of self-assisted InAs nanowires on graphene