1.1k citations · 2.6k across the 5 of their papers we have counts for
5 papers
Electronic decoupling of an epitaxial graphene monolayer by gold intercalation
Isabella Gierz, Takayuki Suzuki, Dong Su Lee +7
The application of graphene in electronic devices requires large scale epitaxial growth. The presence of the substrate, however, usually reduces the charge carrier mobility conside…
Quasi-free Standing Epitaxial Graphene on SiC by Hydrogen Intercalation
C. Riedl, C. Coletti, T. Iwasaki +2
Quasi-free standing epitaxial graphene is obtained on SiC(0001) by hydrogen intercalation. The hydrogen moves between the 6root3 reconstructed initial carbon layer and the SiC subs…
Band structure engineering of epitaxial graphene on SiC by molecular doping
Camilla Coletti, Christian Riedl, Dong Su Lee +5
Epitaxial graphene on SiC(0001) suffers from strong intrinsic n-type doping. We demonstrate that the excess negative charge can be fully compensated by non-covalently functionalizi…
Atomic Hole Doping of Graphene
Isabella Gierz, Christian Riedl, Ulrich Starke +2
Graphene is an excellent candidate for the next generation of electronic materials due to the strict two-dimensionality of its electronic structure as well as the extremely high ca…
Raman spectra of epitaxial graphene on SiC and of epitaxial graphene transferred to SiO2
Dong Su Lee, Christian Riedl, Benjamin Krauß +3
Raman spectra were measured for mono-, bi- and trilayer graphene grown on SiC by solid state graphitization, whereby the number of layers was pre-assigned by angle-resolved ultravi…