Bilayer graphene inclusions in rotational-stacked multilayer epitaxial graphene
arXiv:1010.1767 · doi:10.1103/PhysRevB.83.125302
Abstract
Additional component in multi-layer epitaxial graphene grown on the C-terminated surface of SiC, which exhibits the characteristic electronic properties of a AB-stacked graphene bilayer, is identified in magneto-optical response of this material. We show that these inclusions represent a well-defined platform for accurate magneto-spectroscopy of unperturbed graphene bilayers.
arXiv comment5 pages, 2 figures, to appear in Phys. Rev. B
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Cited by in corpus (17)
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