Photo-induced doping and strain in exfoliated graphene
arXiv:1310.0970 · doi:10.1063/1.4823552
Abstract
The modification of single layer graphene due to intense, picoseconds near-infrared laser pulses is investigated. We monitor the stable changes introduced to graphene upon photoexcitation using Raman spectroscopy. We find that photoexcitation leads to both a local increase in hole doping and a reduction in compressive strain. Possible explanations for these effects, due to photo-induced oxygenation and photo-induced buckling of the graphene, are discussed.
4 pages, 3 figures. The following article has been accepted by Applied Physics Letters. After it is published, it will be found at http://apl.aip.org/
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