Electrically Tunable Optical Nonlinearities in Graphene-Covered SiN Waveguides Characterized by Four-Wave Mixing

Abstract

We present a degenerate four-wave mixing experiment on a silicon nitride (SiN) waveguide covered with gated graphene. We observe strong dependencies on signal-pump detuning and Fermi energy, i.e. the optical nonlinearity is demonstrated to be electrically tunable. In the vicinity of the interband absorption edge ($2|E_F|\approx \hslash \omega$) a peak value of the waveguide nonlinear parameter of $\approx$ 6400 m${}^{-1}$W${}^{-1}$, corresponding to a graphene nonlinear sheet conductivity $|{\sigma }_s^{(3)}|\approx 4.3\cdot 10^{-19}$ A m${}^2$V${}^{-3}$ is measured.

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Cited by in corpus (1)

• Enhanced optical Kerr effect method for a detailed characterization of the third order nonlinearity of 2D materials applied to graphene