Tunable Graphene Electronics with Local Ultrahigh Pressure

Abstract

We achieve fine tuning of graphene effective doping by applying ultrahigh pressures (> 10 GPa) using Atomic Force Microscopy (AFM) diamond tips. Specific areas in graphene flakes are irreversibly flattened against a SiO2 substrate. Our work represents the first demonstration of local creation of very stable effective p-doped graphene regions with nanometer precision, as unambiguously verified by a battery of techniques. Importantly, the doping strength depends monotonically on the applied pressure, allowing a controlled tuning of graphene electronics. Through this doping effect, ultrahigh pressure modifications include the possibility of selectively modifying graphene areas to improve their electrical contact with metal electrodes, as shown by Conductive AFM. Density Functional Theory calculations and experimental data suggest that this pressure level induces the onset of covalent bonding between graphene and the underlying SiO2 substrate. Our work opens a convenient avenue to tuning the electronics of 2D materials and van der Waals heterostructures through pressure with nanometer resolution.

References in corpus (15)

• The Raman Fingerprint of Graphene
• Two Dimensional Atomic Crystals
• Quantifying defects in graphene via Raman spectroscopy at different excitation energies
• Electrochemically Top Gated Graphene: Monitoring Dopants by Raman Scattering
• Born-Oppenheimer Breakdown in Graphene
• Tuning the graphene work function by electric field effect
• Atmospheric Oxygen Binding and Hole Doping in Deformed Graphene on a SiO2 Substrate
• Dynamic band structure tuning of graphene moiré superlattices with pressure
• Ultrahard carbon film from epitaxial two-layer graphene
• Van der Waals pressure and its effect on trapped interlayer molecules
• A virtual instrument to standardise the calibration of atomic force microscope cantilevers
• Interfacial adhesion between graphene and silicon dioxide by density functional theory with van der Waals corrections
• Interaction between graphene and SiO2 surface
• Doping of graphene adsorbed on the a-SiO${}_2$ surface
• Giant reversible nanoscale piezoresistance at room temperature in Sr2IrO4 thin films

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