Microanalysis of single-layer hexagonal boron nitride islands on Ir(111)

Abstract

Large hexagonal boron nitride (hBN) single-layer islands of high crystalline quality were grown on Ir(111) via chemical vapor deposition (CVD) and have been studied with low-energy electron microscopy (LEEM). Two types of hBN islands have been observed that structurally differ in their shape and orientation with respect to iridium, where the former greatly depends on the iridium step morphology. Photoemission electron microscopy (PEEM) and IV-LEEM spectroscopy revealed that the two island types also exhibit different work functions and bindings to iridium, which provides an explanation for differences in their shape and growth modes. In addition, various temperatures were used for the CVD synthesis of hBN, and it was found that at temperatures higher than ~950 °C boron atoms, originating either from decomposed borazine molecules or disintegrated hBN islands, can form additional compact reconstructed regions. The presented results are important for advancement in synthesis of high-quality hBN and other boron-based layered materials, and could therefore expedite their technological implementation.

arXiv comment9 pages, 6 figures

References in corpus (8)

• Boron nitride substrates for high-quality graphene electronics
• Hexagonal boron nitride is an indirect bandgap semiconductor
• In-plane orientation effects on the electronic structure, stability and Raman scattering of monolayer graphene on Ir(111)
• In situ observation of stress relaxation in epitaxial graphene
• Graphene on Ir(111) characterized by angle-resolved photoemission
• Epitaxial hexagonal boron nitride on Ir(111): A work function template
• Trapping Surface Electrons on Graphene Layers and Islands
• Wrinkles of graphene on Ir(111): Macroscopic network ordering and internal multi-lobed structure

Cited by in corpus (6)

• Macroscopic Single-Phase Monolayer Borophene on Arbitrary Substrates
• Boron nitride monolayer growth on vicinal Ni(111) surfaces systematically studied with a curved crystal
• Lateral heterostructures of hexagonal boron nitride and graphene: BCN alloy formation and microstructuring mechanism
• Evolution of ordered nanoporous phases during h-BN growth: Controlling the route from gas-phase precursor to 2D material by $\text{in-situ}$ monitoring
• Equilibrium shape of single-layer hexagonal boron nitride islands on low-index metal substrates
• Sequential lithium deposition on hexagonal boron nitride monolayer on Ir(111): Identifying intercalation and adsorption