Graphene Nanoribbons on Hexagonal Boron Nitride: Deposition and Transport Characterization
arXiv:1810.06925 · doi:10.1063/1.5065568
Abstract
Chemically synthesized "cove"-type graphene nanoribbons (cGNRs) of different widths were brought into dispersion and drop-cast onto exfoliated hexagonal boron nitride (hBN) on a Si/SiO2 chip. With AFM we observed that the cGNRs form ordered domains aligned along the crystallographic axes of the hBN. Using electron beam lithography and metallization, we contacted the cGNRs with NiCr/Au, or Pd contacts and measured their I-V-characteristics. The transport through the ribbons was dominated by the Schottky behavior of the contacts between the metal and the ribbon.
arXiv commentmanuscript accepted by APL
References in corpus (12)
- Boron nitride substrates for high-quality graphene electronics
- Energy Band Gap Engineering of Graphene Nanoribbons
- Exceptional ballistic transport in epitaxial graphene nanoribbons
- Electron Transport in Disordered Graphene Nanoribbons
- Superlubricity of Graphene Nanoribbons on Gold Surfaces
- Short-Channel Field Effect Transistors with 9-Atom and 13-Atom wide Graphene Nanoribbons
- Edge disorder induced Anderson localization and conduction gap in graphene nanoribbons
- Bottom-up Graphene Nanoribbon Field-Effect Transistors
- Nanoserpents: Graphene Nanoribbons Motion on Two-Dimensional Hexagonal Materials
- Oriented Graphene Nanoribbons Embedded in Hexagonal Boron Nitride Trenches
- Reactive-Ion-Etched Graphene Nanoribbons on a Hexagonal Boron Nitride Substrate
- Optical spectrum of bottom-up graphene nanoribbons: towards efficient atom-thick excitonic solar cells