Quasi-stationary near-gate plasmons in van der Waals heterostructures
arXiv:2111.10156 · doi:10.1103/PhysRevB.104.195435
Abstract
Near-gate plasmons are a new type of plasma oscillations emerging in homogeneous two-dimensional electron systems where a gate provides partial screening of electron-electron interaction. Here we develop a theory of the near-gate plasmons in van der Waals heterostructures comprising a conducting layer separated by a thin insulator from an uncharged disk-shaped gate. We show that in these structures the near-gate plasmons form gate-size-quantized quasi-stationary discrete modes even in the collisionless limit. Belonging to continuum spectrum of two-dimensional plasmons outside of the disk-gate, the near-gate plasmons are manifested as Fano-like resonances in frequency and magnetodispersions of scattering cross-section of the former scattered off the region under the gate. This enables to recover spectrum of the near-gate plasmons in the van der Waals heterostructures using near-field imaging techniques.
10 pages, 3 figures
References in corpus (12)
- Ultrahigh electron mobility in suspended graphene
- 2D materials and van der Waals heterostructures
- Boron nitride substrates for high-quality graphene electronics
- Graphene plasmonics
- Highly confined low-loss plasmons in graphene-boron nitride heterostructures
- Giant Faraday rotation in single- and multilayer graphene
- Efficient Fizeau Drag from Dirac electrons in monolayer graphene
- Transmission Line Theory of Collective Plasma Excitations in Periodic Two-Dimensional Electron Systems: Finite Plasmonic Crystals and Tamm States
- Amplified-reflection plasmon instabilities in grating-gate plasmonic crystals
- Plasmons in the van der Waals charge-density-wave material 2H-TaSe2
- Novel 2D Plasmon Induced by Metal Proximity
- Plasmons and magnetoplasmons in partially bounded two-layer electron systems