Field-controlled quantum anomalous Hall effect in electron-doped CrSiTe monolayer: a first-principles prediction
arXiv:2208.02997 · doi:10.1038/s41699-023-00375-3
Abstract
We report Chern insulating phases emerging from a single layer of layered chalcogenide CrSiTe, a transition metal trichacogenides (TMTC) material, in the presence of charge doping. Due to strong hybridization with Te orbitals, the spin-orbit coupling effect opens a finite band gap, leading to a nontrivial topology of the Cr conduction band manifold with higher Chern numbers. Our calculations show that quantum anomalous Hall effects can be realized by adding one electron in a formula unit cell of CrSiTe, equivalent to electron doping by 2.3610 cm carrier density. Furthermore, the doping-induced anomalous Hall conductivity can be controlled by an external magnetic field via spin-orientation-dependent tuning of the spin-orbit coupling. In addition, we find distinct quantum anomalous Hall phases employing tight-binding model analysis, suggesting that CrSiTe can be a fascinating new platform to realize Chern insulating systems with higher Chern numbers.
arXiv comment9 pages, 8 figures, and additional supplementary information
References in corpus (30)
- Boron nitride substrates for high-quality graphene electronics
- Layer-dependent Ferromagnetism in a van der Waals Crystal down to the Monolayer Limit
- Discovery of intrinsic ferromagnetism in 2D van der Waals crystals
- Control of valley polarization in monolayer MoS2 by optical helicity
- Maximally localized Wannier functions: Theory and applications
- WannierTools: An open-source software package for novel topological materials
- Substrate-induced bandgap in graphene on hexagonal boron nitride
- Chern Numbers in Discretized Brillouin Zone: Efficient Method of Computing (Spin) Hall Conductances
- Ising-Type Magnetic Ordering in Atomically Thin FePS3
- Magnetic ground state of semiconducting transition metal trichalcogenide monolayers
- Tailoring Magnetic Anisotropy in CrGeTe by Electrostatic Gating
- Spin-flop transition in atomically thin MnPS crystals
- Large magneto-optical effects and magnetic anisotropy energy in two-dimensional CrGeTe
- Magnetic Correlations in the Quasi-2D Semiconducting Ferromagnet CrSiTe
- Quantum anomalous Hall effect with tunable Chern number in magnetic topological insulator film
- Systematic {\it ab initio} study of the magnetic and electronic properties of all 3d transition metal linear and zigzag nanowires
- Towards large-Chern-number topological phases by periodic quenching
- Carrier and strain tunable intrinsic magnetism in two-dimensional MAX transition metal chalcogenides
- Maximally localized Wannier function within linear combination of pseudo-atomic orbital method: Implementation and applications to transition-metal-benzene complex
- Chern insulator at a magnetic rocksalt interface
- Tuning the magnetism and band topology through antisite defects in Sb doped MnBi4Te7
- Intrinsic ferromagnetism and quantum anomalous Hall effect in CoBr2 monolayer
- Effect of Coulomb Interactions on the Electronic and Magnetic Properties of Two-Dimensional CrSiTe and CrGeTe Materials
- Flux states and topological phases from spontaneous time-reversal symmetry breaking in CrSi(Ge)Te-based systems
- Effect of Coulomb interaction on the two-dimensional electronic structure of the van der Waals ferromagnet CrGeTe
- Multiple Dirac Cones and Topological Magnetism in Honeycomb-Monolayer Transition Metal Trichalcogenides
- Multiple magnetism controlled topological states in EuAgAs
- Optically induced topological states on the surface of mercury telluride
- Tuning ferromagnetic BaFe(PO) through a high Chern number topological phase
- Quantum spin Hall effect and topological phase transitions in honeycomb antiferromagnets