7.1k citations · 9.4k across the 3 of their papers we have counts for
3 papers
Multi-terminal electrical transport measurements of molybdenum disulphide using van der Waals heterostructure device platform
Xu Cui, Gwan-Hyoung Lee, Young Duck Kim +15
Atomically thin two-dimensional (2D) semiconductors such as molybdenum disulphide (MoS2) hold great promise in electrical, optical, and mechanical devices and display novel physica…
Atomically thin p-n junctions with van der Waals heterointerfaces
Chul-Ho Lee, Gwan-Hyoung Lee, Arend M. van der Zande +10
Semiconductor p-n junctions are essential building blocks for modern electronics and optoelectronics. In conventional semiconductors, a p-n junction produces depletion regions of f…
Boron nitride substrates for high-quality graphene electronics
C. R. Dean, A. F. Young, I. Meric +8
Graphene devices on standard SiO2 substrates are highly disordered, exhibiting characteristics far inferior to the expected intrinsic properties of graphene[1-12]. While suspending…