Silicon quantum processor unit cell operation above one Kelvin
arXiv:1902.09126 · doi:10.1038/s41586-020-2171-6
Abstract
Quantum computers are expected to outperform conventional computers for a range of important problems, from molecular simulation to search algorithms, once they can be scaled up to large numbers of quantum bits (qubits), typically millions. For most solid-state qubit technologies, e.g. those using superconducting circuits or semiconductor spins, scaling poses a significant challenge as every additional qubit increases the heat generated, while the cooling power of dilution refrigerators is severely limited at their operating temperature below 100 mK. Here we demonstrate operation of a scalable silicon quantum processor unit cell, comprising two qubits confined to quantum dots (QDs) at 1.5 Kelvin. We achieve this by isolating the QDs from the electron reservoir, initialising and reading the qubits solely via tunnelling of electrons between the two QDs. We coherently control the qubits using electrically-driven spin resonance (EDSR) in isotopically enriched silicon Si, attaining single-qubit gate fidelities of 98.6% and coherence time = 2s during `hot' operation, comparable to those of spin qubits in natural silicon at millikelvin temperatures. Furthermore, we show that the unit cell can be operated at magnetic fields as low as 0.1 T, corresponding to a qubit control frequency of 3.5 GHz, where the qubit energy is well below the thermal energy. The unit cell constitutes the core building block of a full-scale silicon quantum computer, and satisfies layout constraints required by error correction architectures. Our work indicates that a spin-based quantum computer could be operated at elevated temperatures in a simple pumped He system, offering orders of magnitude higher cooling power than dilution refrigerators, potentially enabling classical control electronics to be integrated with the qubit array.
References in corpus (31)
- Quantum Computation with Quantum Dots
- Surface codes: Towards practical large-scale quantum computation
- Single-shot read-out of an individual electron spin in a quantum dot
- An addressable quantum dot qubit with fault-tolerant control fidelity
- A Two Qubit Logic Gate in Silicon
- A >99.9%-fidelity quantum-dot spin qubit with coherence limited by charge noise
- A programmable two-qubit quantum processor in silicon
- Electron spin coherence exceeding seconds in high purity silicon
- Interfacing spin qubits in quantum dots and donors - hot, dense and coherent
- A CMOS silicon spin qubit
- Electrically driven single electron spin resonance in a slanting Zeeman field
- Quantum CNOT Gate for Spins in Silicon
- Electron Spin-Relaxation Times of Phosphorus Donors in Silicon
- Silicon CMOS architecture for a spin-based quantum computer
- Fidelity benchmarks for two-qubit gates in silicon
- Cryogenic Control Architecture for Large-Scale Quantum Computing
- A Crossbar Network for Silicon Quantum Dot Qubits
- Self-Consistent Measurement and State Tomography of an Exchange-Only Spin Qubit
- A fault-tolerant addressable spin qubit in a natural silicon quantum dot
- Silicon qubit fidelities approaching incoherent noise limits via pulse engineering
- Gate-based single-shot readout of spins in silicon
- Superconducting Qubits: A Short Review
- Gate fidelity and coherence of an electron spin in a Si/SiGe quantum dot with micromagnet
- Electron spin decoherence in isotope-enriched silicon
- Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon
- Spin lifetime and charge noise in hot silicon quantum dot qubits
- Spin-orbit coupling and operation of multi-valley spin qubits
- Observation of the single-electron regime in a highly tunable silicon quantum dot
- Coherent spin control of s-, p-, d- and f-electrons in a silicon quantum dot
- Quantum manipulation of two-electron spin states in metastable double quantum dots
- Spin relaxation and coherence times for electrons at the Si/SiO2 interface
Cited by in corpus (143)
- Fast universal quantum control above the fault-tolerance threshold in silicon
- A compact ion-trap quantum computing demonstrator
- Qubits made by advanced semiconductor manufacturing
- Semiconductor Qubits In Practice
- Universal quantum logic in hot silicon qubits
- CMOS-based cryogenic control of silicon quantum circuits
- Scaling silicon-based quantum computing using CMOS technology: State-of-the-art, Challenges and Perspectives
- A hole spin qubit in a fin field-effect transistor above 4 kelvin
- Quantum error correction with silicon spin qubits
- Review of performance metrics of spin qubits in gated semiconducting nanostructures
- Microwaves in Quantum Computing
- Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon
- Ultrafast coherent control of a hole spin qubit in a germanium quantum dot
- Noisy intermediate-scale quantum computers
- Coherent spin qubit transport in silicon
- Quantum tomography of an entangled three-spin state in silicon
- High-fidelity operation and algorithmic initialisation of spin qubits above one kelvin
- Spiderweb array: A sparse spin-qubit array
- Pauli Blockade in Silicon Quantum Dots with Spin-Orbit Control
- A shuttling-based two-qubit logic gate for linking distant silicon quantum processors
- Hole spin qubits in Si FinFETs with fully tunable spin-orbit coupling and sweet spots for charge noise
- Roadmap for Unconventional Computing with Nanotechnology
- Long-lived valley states in bilayer graphene quantum dots
- Colloquium: Advances in automation of quantum dot devices control
- Resource Estimation for Quantum Variational Simulations of the Hubbard Model
- Low charge noise quantum dots with industrial CMOS manufacturing
- Assessment of error variation in high-fidelity two-qubit gates in silicon
- Spin relaxation benchmarks and individual qubit addressability for holes in quantum dots
- Coherent spin qubit shuttling through germanium quantum dots
- Overcoming I/O bottleneck in superconducting quantum computing: multiplexed qubit control with ultra-low-power, base-temperature cryo-CMOS multiplexer
- Strong electron-electron interactions in Si/SiGe quantum dots
- Silicon quantum dot devices with a self-aligned second gate layer
- Single-electron spin resonance in a nanoelectronic device using a global field
- A silicon singlet-triplet qubit driven by spin-valley coupling
- A 300 mm foundry silicon spin qubit unit cell exceeding 99% fidelity in all operations
- Coherent control and spectroscopy of a semiconductor quantum dot Wigner molecule
- Two-qubit logic with anisotropic exchange in a fin field-effect transistor
- Variability of electron and hole spin qubits due to interface roughness and charge traps
- Gate-Controlled Quantum Dots Based on Two-Dimensional Materials
- Tunable coupling and isolation of single electrons in silicon metal-oxide-semiconductor quantum dots
- Longitudinal and transverse electric field manipulation of hole spin-orbit qubits in one-dimensional channels
- Hotter is easier: unexpected temperature dependence of spin qubit frequencies
- Coherent control of electron spin qubits in silicon using a global field
- Radio frequency reflectometry in silicon-based quantum dots
- Is all-electrical silicon quantum computing feasible in the long term?
- Toward Robust Autotuning of Noisy Quantum Dot Devices
- Analog Quantum Simulation of the Dynamics of Open Quantum Systems with Quantum Dots and Microelectronic Circuits
- Rapid single-shot parity spin readout in a silicon double quantum dot with fidelity exceeding 99 %
- Electrical control of uniformity in quantum dot devices
- Optical single-shot readout of spin qubits in silicon
- Ultrafast and Electrically Tunable Rabi Frequency in a Germanium Hut Wire Hole Spin Qubit
- Interplay of charge noise and coupling to phonons in adiabatic electron transfer between quantum dots
- Bell-state tomography in a silicon many-electron artificial molecule
- Probing the Spatial Variation of the Inter-Valley Tunnel Coupling in a Silicon Triple Quantum Dot
- Controlling Synthetic Spin-Orbit Coupling in a Silicon Quantum Dot with Magnetic Field
- Bounds to electron spin qubit variability for scalable CMOS architectures
- Switching between relaxation hotspots and coldspots in disordered spin qubits
- Quantum Control of Spin Qubits Using Nanomagnets
- A Spin Quintet in a Silicon Double Quantum Dot: Spin Blockade and Relaxation
- High-fidelity spin qubit shuttling via large spin-orbit interaction
- Superconducting routing platform for large-scale integration of quantum technologies
- CMOS Quantum Computing: Toward A Quantum Computer System-on-Chip
- Electron cascade for spin readout
- Autonomous estimation of high-dimensional Coulomb diamonds from sparse measurements
- Conductivity and size quantization effects in semiconductor -layer systems
- Flopping-mode spin qubit in a Si-MOS quantum dot
- An ultra-stable 1.5 tesla permanent magnet assembly for qubit experiments at cryogenic temperatures
- Spin-Valley Qubit Dynamics In Exchange Coupled Silicon Quantum Dots
- A high-sensitivity charge sensor for silicon qubits above one kelvin
- Scalable on-chip multiplexing of silicon single and double quantum dots
- Hole spin in tunable Ge hut wire double quantum dot
- Compromise-Free Scaling of Qubit Speed and Coherence
- Effect of quantum Hall edge strips on valley splitting in silicon quantum wells
- Feedback-based active reset of a spin qubit in silicon
- Entanglement based observables for quantum impurities
- Real-time feedback protocols for optimizing fault-tolerant two-qubit gate fidelities in a silicon spin system
- Quantum information in neural systems
- Single-electron occupation in quantum dot arrays at selectable plunger gate voltage
- Origin of giant valley splitting in silicon quantum wells induced by superlattice barriers
- Cryogenic hyperabrupt strontium titanate varactors for sensitive reflectometry of quantum dots
- Valley splitting in silicon from the interference pattern of quantum oscillations
- Valley-Free Silicon Fins Caused by Shear Strain
- Anisotropy-Exchange Resonance as a Mechanism for Entangled State Switching
- Identifying Pauli spin blockade using deep learning
- Single-tone pulse sequences and robust two-tone shaped pulses for three silicon spin qubits with always-on exchange
- Non-reciprocal Pauli Spin Blockade in a Silicon Double Quantum Dot
- Few-electron Single and Double Quantum Dots in an InAs Two-Dimensional Electron Gas
- Microwave-resonator-detected excited-state spectroscopy of a double quantum dot
- Memristor-based cryogenic programmable DC sources for scalable in-situ quantum-dot control
- Temperature-dependent broadening of coherent current peaks in InAs double quantum dots
- Violating Bell's inequality in gate-defined quantum dots
- Flopping-mode electron dipole spin resonance in the strong-driving regime
- Democratizing Spin Qubits
- Low-temperature environments for quantum computation and quantum simulation
- Interaction between interface and massive states in multivalley topological heterostructures
- Conductive filament evolution dynamics revealed by cryogenic (1.5 K) multilevel switching of CMOS-compatible Al2O3/TiO2 resistive memories
- Method for efficient large-scale cryogenic characterization of CMOS technologies
- Impact of electrostatic crosstalk on spin qubits in dense CMOS quantum dot arrays
- Designing arbitrary single-axis rotations robust against perpendicular time-dependent noise
- Spatially-resolved decoherence of donor spins in silicon strained by a metallic electrode
- High temperature spin selectivity in a quantum dot qubit using reservoir spin accumulation
- Measurement of cryoelectronics heating using a local quantum dot thermometer in silicon
- Improved Single-Shot Qubit Readout Using Twin RF-SET Charge Correlations
- Performance of high impedance resonators in dirty dielectric environments
- Probing two-qubit capacitive interactions beyond bilinear regime using dual Hamiltonian parameter estimations
- Charge-noise resilience of two-electron quantum dots in Si/SiGe heterostructures
- Gate reflectometry in dense quantum dot arrays
- Integrated multiplexed microwave readout of silicon quantum dots in a cryogenic CMOS chip
- Real-time milli-Kelvin thermometry in a semiconductor qubit architecture
- Controlled quantum dot array segmentation via a highly tunable interdot tunnel coupling
- A compact and versatile cryogenic probe station for quantum device testing
- Long-range two-hybrid-qubit gates mediated by a microwave cavity with red sidebands
- Compact frequency multiplexed readout of silicon quantum dots in monolithic FDSOI 28nm technology
- Microsecond-lived quantum states in a carbon-based circuit driven by cavity photons
- Full tunability and quantum coherent dynamics of a driven multilevel system
- A thermal-noise-resilient microwave quantum network traversing 4 K
- Electronic control and switching of entangled spin state using anisotropy and exchange in the three-particle paradigm
- Experimental online quantum dots charge autotuning using neural networks
- Kondo enhancement of current induced spin accumulation in a quantum dot
- All-electrical operation of a spin qubit coupled to a high-Q resonator
- Compiling the surface code to crossbar spin qubit architectures
- A 2x2 quantum dot array in silicon with fully tuneable pairwise interdot coupling
- Proximal quantum control of spin and spin ensemble with highly localized control field from skyrmions
- Low Temperature Relaxation of Donor Bound Electron Spins in Si:P
- Radiofrequency cascade readout of coupled spin qubits
- Wavelet correlation noise analysis for qubit operation variable time series
- Towards hole-spin qubits in Si pMOSFETs within a planar CMOS foundry technology
- Compact gate-based read-out of multiplexed quantum devices with a cryogenic CMOS active inductor
- Variability of hole spin qubits in planar Germanium
- In-situ Investigation of the Phase Formation and Superconductivity in VSi Thin Films at High Temperatures
- Fast spin-valley-based quantum gates in Si with micromagnets
- Charge state estimation in quantum dots using a Bayesian approach
- Fast time-domain current measurement for quantum dot charge sensing using a homemade cryogenic transimpedance amplifier
- A SWAP Gate for Spin Qubits in Silicon
- Coulomb collisions of hot and cold single electrons in series-coupled silicon single-electron pumps
- State Initialization of a Hot Spin Qubit in a Double Quantum Dot by Measurement-Based Quantum Feedback Control
- Dual on-chip SQUID measurement protocol for flux detection in large magnetic fields
- Charge-induced energy shift of a single-spin qubit under a magnetic-field gradient
- Highly Tunable Two-Qubit Interactions in Si/SiGe Quantum Dots by Interchanging the Roles of Qubit-Defining Gates
- Designs for a two-dimensional Si quantum dot array with spin qubit addressability
- Enhanced local addressability of a spin array with local exchange pulses and global microwave driving
- Quantum Transport in 40-nm MOSFETs at Deep-Cryogenic Temperatures
- Spin-Dependent Transport Through a Colloidal Quantum Dot: The Role of Exchange Interactions