High temperature spin selectivity in a quantum dot qubit using reservoir spin accumulation

Abstract

Employing spins in quantum dots for fault-tolerant quantum computing in large-scale qubit arrays with on-chip control electronics requires high-fidelity qubit operation at elevated temperature. This poses a challenge for single spin initialization and readout. Existing schemes rely on Zeeman splitting or Pauli spin blockade with typical energy scales of 0.1 or 1 meV for electron-based qubits, so that sufficient fidelity is obtained only at temperatures around or below 0.1 or 1 K, respectively. Here we describe a method to achieve high temperature spin selectivity in a quantum dot using a reservoir with a spin accumulation, which deterministically sets the spin of a single electron on the dot. Since spin accumulation as large as 10 meV is achievable in silicon, spin selection with electrically adjustable error rates below $10^{-4}$ is possible even in a liquid He bath at 4 K. Via the reservoir spin accumulation, induced and controlled by a nearby ferromagnet, classical information (magnetization direction) is mapped onto a spin qubit. These features provide the prospect of spin qubit operation at elevated temperatures and connect the worlds of quantum computing and spintronics.

arXiv commentSupplementary material available via the journal reference

References in corpus (35)

• Surface codes: Towards practical large-scale quantum computation
• Electronic spin transport and spin precession in single graphene layers at room temperature
• Enhanced Gilbert Damping in Thin Ferromagnetic Films
• Spin Torque Ferromagnetic Resonance Induced by the Spin Hall Effect
• Single-shot read-out of an individual electron spin in a quantum dot
• Direct electronic measurement of the spin Hall effect
• Driven coherent oscillations of a single electron spin in a quantum dot
• A Two Qubit Logic Gate in Silicon
• Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices
• Semiconductor Spin Qubits
• Electrically driven single electron spin resonance in a slanting Zeeman field
• Roads towards fault-tolerant universal quantum computation
• Quantum CNOT Gate for Spins in Silicon
• Computing with spin qubits at the surface code error threshold
• Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot
• Fast universal quantum control above the fault-tolerance threshold in silicon
• Thermally driven spin injection from a ferromagnet into a non-magnetic metal
• Universal control of a six-qubit quantum processor in silicon
• Silicon CMOS architecture for a spin-based quantum computer
• Silicon quantum processor unit cell operation above one Kelvin
• Two-qubit silicon quantum processor with operation fidelity exceeding 99%
• Universal quantum logic in hot silicon qubits
• Rapid Single-Shot Measurement of a Singlet-Triplet Qubit
• Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting
• A Crossbar Network for Silicon Quantum Dot Qubits
• A fault-tolerant addressable spin qubit in a natural silicon quantum dot
• A hole spin qubit in a fin field-effect transistor above 4 kelvin
• Gate-based single-shot readout of spins in silicon
• Quantum Computers and Quantum Coherence
• Tunable spin-selective loading of a silicon spin qubit
• Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN heterostructures
• Quantum Dot as a Spin--Current Diode
• Optical spin injection and spin lifetime in Ge heterostructures
• Giant spin accumulation in silicon nonlocal spin-transport devices
• Orbital and valley state spectra of a few-electron silicon quantum dot