Tunneling Anisotropic Magnetoresistance: A spin-valve like tunnel magnetoresistance using a single magnetic layer

Abstract

We introduce a new class of spintronics devices in which a spin-valve like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled ferromagnets. The effect is observed in a normal-metal/insulator/ferromagnetic-semiconductor tunneling device. This behavior is caused by the interplay of the anisotropic density of states in (Ga,Mn)As with respect to the magnetization direction, and the two-step magnetization reversal process in this material.

4 pages, 4 figures, submitted to PRL

References in corpus (4)

• Giant Planar Hall Effect in Epitaxial (Ga,Mn)As Devices
• Theory of Magnetic Anisotropy in III_{1-x}Mn_{x}V Ferromagnets
• High Curie temperature GaMnAs obtained by resistance-monitored annealing
• High quality GaMnAs films grown with As dimers

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