Tunneling Anisotropic Magnetoresistance in Co/AlOx/Au Tunnel Junctions

Abstract

We observe spin-valve-like effects in nano-scaled thermally evaporated Co/AlOx/Au tunnel junctions. The tunneling magnetoresistance is anisotropic and depends on the relative orientation of the magnetization direction of the Co electrode with respect to the current direction. We attribute this effect to a two-step magnetization reversal and an anisotropic density of states resulting from spin-orbit interaction. The results of this study points to future applications of novel spintronics devices involving only one ferromagnetic layer.

11 pages, 5 figures. Accpted for publishing on Nano Letters, 2008

References in corpus (6)

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• Electric Field Control of Spin Transport
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• Effect of spin relaxation rate on the interfacial spin depolarization in ferromagnet/oxide/semiconductor contacts
• Anisotropic magneto-Coulomb effect versus spin accumulation in a ferromagnetic single-electron device
• Quantum-well tunneling anisotropic magnetoresistance above room temperature
• Perspectives in spintronics: magnetic resonant tunneling, spin-orbit coupling, and GaMnAs