391 citations · 1k across the 8 of their papers we have counts for
8 papers
Non-thermal photocoercivity effect in a ferromagnetic semiconductor
G. V. Astakhov, H. Hoffmann, V. L. Korenev +7
We report a photoinduced change of the coercive field, i.e., a photocoercivity effect (PCE), under very low intensity illumination of a low-doped (Ga,Mn)As ferromagnetic semiconduc…
Magnetization-Switched Metal-Insulator Transition in a (Ga,Mn)As Tunnel Device
K. Pappert, M. J. Schmidt, S. Hümpfner +6
We observe the occurrence of an Efros-Shklovskii gap in (Ga,Mn)As based tunnel junctions. The occurrence of the gap is controlled by the extent of the hole wave-function on the Mn…
Current Assisted Magnetization Switching in (Ga,Mn)As Nanodevices
C. Gould, K. Pappert, C. Rüster +6
Current induced magnetization switching and resistance associated with domain walls pinned in nanoconstrictions have both been previously reported in (Ga,Mn)As based devices, but u…
Temperature Dependent Magnetic Anisotropy in (Ga,Mn)As Layers
M. Sawicki, F. Matsukura, A. Idziaszek +7
It is demonstrated by SQUID measurements that (Ga,Mn)As films can exhibit perpendicular easy axis at low temperatures, even under compressive strain, provided that the hole concent…
1500-fold Tunneling Anisotropic Magnetoresistance in a (Ga,Mn)As stack
C. Rüster, C. Gould, T. Jungwirth +6
We report the discovery of a super-giant tunneling anisotropic magnetoresistance in an epitaxially grown (Ga,Mn)As/GaAs/(Ga,Mn)As structure. The effect arises from a strong depende…
Tunneling Anisotropic Magnetoresistance: A spin-valve like tunnel magnetoresistance using a single magnetic layer
C. Gould, C. Rüster, T. Jungwirth +6
We introduce a new class of spintronics devices in which a spin-valve like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection…