33 citations · 39 across the 2 of their papers we have counts for
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cond-mat.mes-hall2006★ 6 cited
Current Assisted Magnetization Switching in (Ga,Mn)As Nanodevices
C. Gould, K. Pappert, C. Rüster +6
Current induced magnetization switching and resistance associated with domain walls pinned in nanoconstrictions have both been previously reported in (Ga,Mn)As based devices, but u…
cond-mat.mes-hall2004
1500-fold Tunneling Anisotropic Magnetoresistance in a (Ga,Mn)As stack
C. Rüster, C. Gould, T. Jungwirth +6
We report the discovery of a super-giant tunneling anisotropic magnetoresistance in an epitaxially grown (Ga,Mn)As/GaAs/(Ga,Mn)As structure. The effect arises from a strong depende…
cond-mat.mes-hall2004
Tunneling Anisotropic Magnetoresistance: A spin-valve like tunnel magnetoresistance using a single magnetic layer
C. Gould, C. Rüster, T. Jungwirth +6
We introduce a new class of spintronics devices in which a spin-valve like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection…