Non-thermal photocoercivity effect in a ferromagnetic semiconductor

Abstract

We report a photoinduced change of the coercive field, i.e., a photocoercivity effect (PCE), under very low intensity illumination of a low-doped (Ga,Mn)As ferromagnetic semiconductor. We find a strong correlation between the PCE and the sample resistivity. Spatially resolved dynamics of the magnetization reversal rule out any role of thermal heating in the origin of this PCE, and we propose a mechanism based on the light-induced lowering of the domain wall pinning energy. The PCE is local and reversible, allowing writing and erasing of magnetic images using light.

References in corpus (6)

• Temperature Dependent Magnetic Anisotropy in (Ga,Mn)As Layers
• Temperature Dependent Magnetic Anisotropy in (Ga,Ma)As Layers
• Ultrafast Quenching of Ferromagnetism in InMnAs Induced by Intense Laser Irradiation
• Lattice constant variation and complex formation in zincblende Gallium Manganese Arsenide
• Integrating Magnetism into Semiconductor Electronics
• Domain imaging and domain wall propagation in (Ga,Mn)As thin films with tensile strain

Cited by in corpus (4)

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• Optically switched magnetism in photovoltaic perovskite CH${}_3$NH${}_3$(Mn:Pb)I${}_3$
• Optical spin transfer torque driven domain wall motion in ferromagnetic semiconductor