2 papers
cond-mat.mtrl-sci2005
Tunneling magnetoresistance in devices based on epitaxial NiMnSb with uniaxial anisotropy
J. Liu, E. Girgis, P. Bach +4
We demonstrate tunnel magnetoresistance (TMR) junctions based on a tri layer system consisting of an epitaxial NiMnSb, aluminum oxide and CoFe tri layer. The junctions show a tunne…
cond-mat.mes-hall2004
Tunneling Anisotropic Magnetoresistance: A spin-valve like tunnel magnetoresistance using a single magnetic layer
C. Gould, C. Rüster, T. Jungwirth +6
We introduce a new class of spintronics devices in which a spin-valve like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection…