Magnetoresistance of a semiconducting magnetic wire with domain wall
arXiv:cond-mat/0408456 · doi:10.1103/PhysRevB.71.024430
Abstract
We investigate theoretically the influence of the spin-orbit interaction of Rashba type on the magnetoresistance of a semiconducting ferromagnetic nanostructure with a laterally constrained domain wall. The domain wall is assumed sharp (on the scale of the Fermi wave length of the charge carriers). It is shown that the magnetoresistance in such a case can be considerably large, which is in a qualitative agreement with recent experimental observations. It is also shown that spin-orbit interaction may result in an increase of the magnetoresistance. The role of localization corrections is also briefly discussed.
arXiv comment5 pages, 2 figures
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- Transmission of correlated electrons through sharp domain walls in magnetic nanowires: a renormalization group approach
- Spin-dependent pump current and noise in an adiabatic quantum pump based on domain walls in a magnetic nanowire
- Theory of chiral effects in magnetic textures with spin-orbit coupling
- Role of non-collinear magnetization: from ferromagnetic nano wires to quantum rings
- Shot noise of a ferromagnetic nanowire with a domain wall