Giant Planar Hall Effect in Epitaxial (Ga,Mn)As Devices

Abstract

Large Hall resistance jumps are observed in microdevices patterned from epitaxial (Ga,Mn)As layers when subjected to a swept, in-plane magnetic field. This giant planar Hall effect is four orders of magnitude greater than previously observed in metallic ferromagnets. This enables extremely sensitive measurements of the angle-dependent magnetic properties of (Ga,Mn)As. The magnetic anisotropy fields deduced from these measurements are compared with theoretical predictions.

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• Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors
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