Giant planar Hall effect in colossal magnetoresistive La(0.84)Sr(0.16)MnO(3) thin films
arXiv:cond-mat/0404291 · doi:10.1063/1.1695197
Abstract
The transverse resistivity in thin films of La(0.84)Sr(0.16)MnO(3) (LSMO)exhibits sharp field-symmetric jumps below Tc. We show that a likely source of this behavior is the giant planar Hall effect (GPHE) combined with biaxial magnetic anisotropy. The effect is comparable in magnitude to that observed recently in the magnetic semiconductor Ga(Mn)As. It can be potentially used in applications such as magnetic sensors and non-volatile memory devices.
References in corpus (2)
Cited by in corpus (7)
- Nanoscale Phenomena in Oxide Heterostructures
- A Gate-tunable Polarized Phase of Two-Dimensional Electrons at the LaAlO3/SrTiO3 Interface
- The magnetoresistance tensor of La(0.8)Sr(0.2)MnO(3)
- Field-dependent anisotropic magnetoresistance and planar Hall effect in epitaxial magnetite thin films
- Unconventional Planar Hall Effect in Exchange-Coupled Topological Insulator-Ferromagnetic Insulator Heterostructures
- Anisotropic Magnetoresistance in Manganites: Model and Experiment
- Local spin ice order induced planar Hall effect in Nd-Sn artificial honeycomb lattice