Spin transfer torque devices utilizing the giant spin Hall effect of tungsten

Abstract

We report a giant spin Hall effect (SHE) in β-W thin films. Using spin torque induced ferromagnetic resonance with a β-W/CoFeB bilayer microstrip we determine the spin Hall angle to be |θ|=0.30\pm0.02, large enough for an in-plane current to efficiently reverse the orientation of an in-plane magnetized CoFeB free layer of a nanoscale magnetic tunnel junction adjacent to a thin β-W layer. From switching data obtained with such 3-terminal devices we independently determine |θ|=0.33\pm0.06. We also report variation of the spin Hall switching efficiency with W layers of different resistivities and hence of variable (α and β) phase composition.

References in corpus (2)

• Study of Intrinsic Spin Hall Effect and Orbital Hall Effect in 4d- and 5d- Transition Metals
• Sign Changes of Intrinsic Spin Hall Effect in Semiconductors and Simple Metals: First-Principles Calculations

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