Efficient Switching of 3-Terminal Magnetic Tunnel Junctions by the Giant Spin Hall Effect of ${\mathrm{Pt}}_{85}{\mathrm{Hf}}_{15}$ Alloy

Abstract

Recent research has indicated that introducing impurities that increase the resistivity of Pt can enhance the efficiency of the spin Hall torque it generates. Here we directly demonstrate the usefulness of this strategy by fabricating prototype 3-terminal in-plane-magnetized magnetic tunnel junctions that utilize the spin Hall torque from a ${\mathrm{Pt}}_{85}{\mathrm{Hf}}_{15}$ alloy, and measuring the critical currents for switching. We find that ${\mathrm{Pt}}_{85}{\mathrm{Hf}}_{15}$ reduces the switching current densities compared to pure Pt by approximately a factor of 2 for both quasi-static ramped current biases and nanosecond-scale current pulses, thereby proving the feasibility of this approach to assist in the development of efficient embedded magnetic memory technologies.

arXiv commentPDF file includes main text and supplemental information. Submitted to peer-reviewed journal

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Cited by in corpus (7)

• Maximizing Spin-Orbit Torque Generated by the Spin Hall Effect of Pt
• Enhancing spin-orbit torque by strong interfacial scattering from ultra-thin insertion layers
• Energy-efficient ultrafast SOT-MRAMs based on low-resistivity spin Hall metal Au0.25Pt0.75
• Origin of Strong Two-Magnon Scattering in Heavy Metal/Ferromagnet/Oxide Heterostructures
• Sub-nanosecond spin-torque switching of perpendicular magnetic tunnel junction nanopillars at cryogenic temperatures
• Magnetization reversal driven by low dimensional chaos in a nanoscale ferromagnet
• Current-Induced magnetization switching by the high spin Hall conductivity $\alpha$-W