Quasistatic and Pulsed Current-Induced Switching with Spin-Orbit Torques in Ultrathin Films with Perpendicular Magnetic Anisotropy

Abstract

Spin-orbit interaction derived spin torques provide a means of reversing the magnetization of perpendicularly magnetized ultrathin films with currents that flow in the plane of the layers. A basic and critical question for applications is the speed and efficiency of switching with nanosecond current pulses. Here we investigate and contrast the quasistatic (slowly swept current) and pulsed current-induced switching characteristics of micron scale Hall crosses consisting of very thin ($<1$ nm) perpendicularly magnetized CoFeB layers on $\beta$-Ta. While complete magnetization reversal is found at a threshold current density in the quasistatic case, short duration ($\le 10$ ns) larger amplitude pulses ($\simeq 10\times$ the quasistatic threshold current) lead to only partial magnetization reversal and domain formation. We associate the partial reversal with the limited time for reversed domain expansion during the pulse.

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Cited by in corpus (4)

• Nanosecond-timescale low error switching of in-plane magnetic tunnel junctions through dynamic Oersted-field assisted spin-Hall effect
• Thermal contribution to the spin-orbit torque in metallic/ferrimagnetic systems
• A four-state magnetic tunnel junction switchable with spin-orbit torques
• Stabilization of exponential number of discrete remanent states with localized spin-orbit torques