A four-state magnetic tunnel junction switchable with spin-orbit torques

Abstract

We present a magnetic tunnel junction (MTJ) where its two ferromagnetic layers are in the form of a single ellipse (SE) and two-crossing ellipses (TCE). The MTJ exhibits four distinct resistance states corresponding to the four remanent states of the TCE structure. Flowing current in an underlying Ta layer generates in the adjacent TCE structure spin-orbit torques which induce field-free switching of the four-state MTJ between all its resistance states. The demonstrated four-state MTJ is an important step towards fabricating multi-level MTJs with numerous resistance states which could be important in various spintronics applications, such as multi-level magnetic random access or neuromorphic memory.

4 pages, 3 figures, This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in (Appl. Phys. Lett. 117, 072404 (2020)) and may be found at (https://aip.scitation.org/doi/10.1063/5.0014771)

References in corpus (10)

• Spin torque switching with the giant spin Hall effect of tantalum
• Training and Operation of an Integrated Neuromorphic Network Based on Metal-Oxide Memristors
• Spin transfer torque devices utilizing the giant spin Hall effect of tungsten
• Switching of perpendicular magnetization by spin-orbit torques in the absence of external magnetic fields
• Spin-orbit torques induced by interface-generated spin currents
• Ultrafast magnetization switching by spin-orbit torques
• Nanosecond-timescale low error switching of in-plane magnetic tunnel junctions through dynamic Oersted-field assisted spin-Hall effect
• Self-current induced spin-orbit torque in FeMn/Pt multilayers
• Quasistatic and Pulsed Current-Induced Switching with Spin-Orbit Torques in Ultrathin Films with Perpendicular Magnetic Anisotropy
• Stabilization of exponential number of discrete remanent states with localized spin-orbit torques